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MMBT3906LT1G
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ON Semiconductor
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Транзисторы - Биполярные (BJT) - Одинарные
- TO-236-3, SC-59, SOT-23-3
- TRANS PNP 40V 0.2A SOT23
Date Sheet
Lagernummer 142288
- 1+： $0.08976
- 10+： $0.08468
- 100+： $0.07988
- 500+： $0.07536
- 1000+： $0.07110
Zwischensummenbetrag $0.08976
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 19 hours ago)
- Factory Lead Time：10 Weeks
- Contact Plating：Tin
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Surface Mount：YES
- Number of Pins：3
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：-40V
- Current-Collector (Ic) (Max)：200mA
- Number of Elements：1
- hFEMin：30
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Published：2004
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Voltage - Rated DC：-40V
- Max Power Dissipation：300mW
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Current Rating：-200mA
- Frequency：250MHz
- Base Part Number：MMBT3906
- Pin Count：3
- Element Configuration：Single
- Power Dissipation：225mW
- Gain Bandwidth Product：250MHz
- Polarity/Channel Type：PNP
- Transistor Type：PNP
- Collector Emitter Voltage (VCEO)：-40V
- Max Collector Current：-200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 50mA
- Transition Frequency：250MHz
- Max Breakdown Voltage：40V
- Collector Base Voltage (VCBO)：-40V
- Emitter Base Voltage (VEBO)：-5V
- Max Junction Temperature (Tj)：150°C
- VCEsat-Max：0.4 V
- Turn On Time-Max (ton)：70ns
- Collector-Base Capacitance-Max：4.5pF
- Height：1.11mm
- Length：2.9mm
- Width：1.3mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 142288
- 1+： $0.08976
- 10+： $0.08468
- 100+： $0.07988
- 500+： $0.07536
- 1000+： $0.07110
Итого $0.08976
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