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MMBT3904TT1G
- ON Semiconductor
- Транзисторы - Биполярные (BJT) - Одинарные
- SC-75, SOT-416
- TRANS NPN 40V 0.2A SOT416
- Date Sheet
Lagernummer 22021
- 1+: $0.04098
- 10+: $0.03866
- 100+: $0.03647
- 500+: $0.03441
- 1000+: $0.03246
Zwischensummenbetrag $0.04098
Спецификация Часто задаваемые вопросы
- Lifecycle Status:ACTIVE (Last Updated: 6 days ago)
- Factory Lead Time:8 Weeks
- Contact Plating:Tin
- Mounting Type:Surface Mount
- Package / Case:SC-75, SOT-416
- Surface Mount:YES
- Number of Pins:3
- Weight:4.535924g
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:40V
- Number of Elements:1
- hFEMin:40
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2006
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- Termination:SMD/SMT
- ECCN Code:EAR99
- Voltage - Rated DC:40V
- Max Power Dissipation:200mW
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Current Rating:200mA
- Frequency:300MHz
- Time@Peak Reflow Temperature-Max (s):40
- Base Part Number:MMBT3904
- Pin Count:3
- Element Configuration:Single
- Power Dissipation:300mW
- Transistor Application:AMPLIFIER
- Gain Bandwidth Product:300MHz
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):40V
- Max Collector Current:200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
- Transition Frequency:300MHz
- Max Breakdown Voltage:40V
- Collector Base Voltage (VCBO):60V
- Emitter Base Voltage (VEBO):6V
- Turn Off Time-Max (toff):250ns
- Turn On Time-Max (ton):70ns
- Height:800μm
- Length:1.65mm
- Width:900μm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 22021
- 1+: $0.04098
- 10+: $0.03866
- 100+: $0.03647
- 500+: $0.03441
- 1000+: $0.03246
Итого $0.04098