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2N3904TFR
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ON Semiconductor
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Транзисторы - Биполярные (BJT) - Одинарные
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Trans GP BJT NPN 40V 0.2A 625mW 3-Pin TO-92 T/R
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time：6 Weeks
- Lifecycle Status：ACTIVE (Last Updated: 3 days ago)
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mounting Type：Through Hole
- Mount：Through Hole
- Number of Pins：3
- Weight：240mg
- Transistor Element Material：SILICON
- hFEMin：100
- Number of Elements：1
- Collector-Emitter Breakdown Voltage：40V
- Published：2007
- Packaging：Tape & Reel (TR)
- Operating Temperature：-55°C~150°C TJ
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Voltage - Rated DC：40V
- Max Power Dissipation：625mW
- Terminal Position：BOTTOM
- Current Rating：200mA
- Frequency：300MHz
- Base Part Number：2N3904
- Element Configuration：Single
- Power Dissipation：625mW
- Transistor Application：SWITCHING
- Gain Bandwidth Product：300MHz
- Polarity/Channel Type：NPN
- Transistor Type：NPN
- Collector Emitter Voltage (VCEO)：40V
- Max Collector Current：200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 5mA, 50mA
- Transition Frequency：300MHz
- Max Breakdown Voltage：40V
- Collector Base Voltage (VCBO)：60V
- Emitter Base Voltage (VEBO)：6V
- Max Junction Temperature (Tj)：150°C
- Turn Off Time-Max (toff)：250ns
- Turn On Time-Max (ton)：70ns
- Width：4.19mm
- Length：5.2mm
- Height：8.77mm
- RoHS Status：ROHS3 Compliant
- Radiation Hardening：No
- REACH SVHC：No SVHC
- Lead Free：Lead Free
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