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2SB1386T100Q
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ROHM Semiconductor
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Транзисторы - Биполярные (BJT) - Одинарные
- TO-243AA
- TRANS PNP 20V 5A SOT-89
Date Sheet
Lagernummer 18
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time：10 Weeks
- Contact Plating：Copper, Tin
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：TO-243AA
- Number of Pins：3
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：20V
- Number of Elements：1
- hFEMin：82
- Operating Temperature：150°C TJ
- Packaging：Tape & Reel (TR)
- Published：2001
- JESD-609 Code：e2
- Part Status：Not For New Designs
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- Termination：SMD/SMT
- ECCN Code：EAR99
- Terminal Finish：TIN COPPER
- HTS Code：8541.21.00.75
- Voltage - Rated DC：-20V
- Max Power Dissipation：500mW
- Terminal Form：FLAT
- Peak Reflow Temperature (Cel)：260
- Current Rating：-5A
- Time@Peak Reflow Temperature-Max (s)：10
- Base Part Number：2SB1386
- Pin Count：3
- Element Configuration：Single
- Power Dissipation：500mW
- Case Connection：COLLECTOR
- Power - Max：2W
- Transistor Application：SWITCHING
- Gain Bandwidth Product：120MHz
- Polarity/Channel Type：PNP
- Transistor Type：PNP
- Collector Emitter Voltage (VCEO)：1V
- Max Collector Current：5A
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 500mA 2V
- Current - Collector Cutoff (Max)：500nA ICBO
- Vce Saturation (Max) @ Ib, Ic：1V @ 100mA, 4A
- Transition Frequency：120MHz
- Max Breakdown Voltage：20V
- Collector Base Voltage (VCBO)：-30V
- Emitter Base Voltage (VEBO)：-6V
- VCEsat-Max：1 V
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 18
Итого $0.00000
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