IRFB4227PBF

Name: Infineon Technologies IRFB4227PBF
Brand: Infineon Technologies
Price: 3.0473469 USD
Availability: InStock
Rating: 4.6 (5 reviews)

Infineon Technologies
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-220-3
MOSFET N-CH 200V 65A TO-220AB
Date Sheet

Lagernummer 3316

1+： $3.04735
10+： $2.87486
100+： $2.71213
500+： $2.55861
1000+： $2.41378

Zwischensummenbetrag $3.04735

Спецификация Часто задаваемые вопросы

Factory Lead Time：12 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：65A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：330W Tc
Turn Off Delay Time：21 ns
Operating Temperature：-40°C~175°C TJ
Packaging：Tube
Series：HEXFET®
Published：2004
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
Termination：Through Hole
ECCN Code：EAR99
Resistance：24MOhm
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：330W
Case Connection：DRAIN
Turn On Delay Time：33 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：24m Ω @ 46A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：4600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：98nC @ 10V
Rise Time：20ns
Vgs (Max)：±30V
Fall Time (Typ)：31 ns
Continuous Drain Current (ID)：65A
Threshold Voltage：5V
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：200V
Pulsed Drain Current-Max (IDM)：260A
Dual Supply Voltage：200V
Recovery Time：150 ns
Max Junction Temperature (Tj)：175°C
Nominal Vgs：5 V
Height：19.8mm
Length：10.6426mm
Width：4.82mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

Со склада 3316

1+： $3.04735
10+： $2.87486
100+： $2.71213
500+： $2.55861
1000+： $2.41378

Итого $3.04735