DMG1013T-7

Name: Diodes Incorporated DMG1013T-7
Brand: Diodes Incorporated
Rating: 4.9 (18 reviews)

Diodes Incorporated
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
SOT-523
P-Channel 20 V 0.7 Ohm 0.27 W Enhancement Mode Mosfet - SOT-523
Date Sheet

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Спецификация Часто задаваемые вопросы

Factory Lead Time：14 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：SOT-523
Number of Pins：3
Weight：2.012816mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：460mA Ta
Drive Voltage (Max Rds On, Min Rds On)：1.8V 4.5V
Number of Elements：1
Power Dissipation (Max)：270mW Ta
Turn Off Delay Time：28.4 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2009
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Resistance：700mOhm
Additional Feature：HIGH RELIABILITY
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：40
Pin Count：3
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：270mW
Turn On Delay Time：5.1 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：700m Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：59.76pF @ 16V
Gate Charge (Qg) (Max) @ Vgs：0.622nC @ 4.5V
Rise Time：8.1ns
Drain to Source Voltage (Vdss)：20V
Vgs (Max)：±6V
Fall Time (Typ)：20.7 ns
Continuous Drain Current (ID)：-460mA
Threshold Voltage：-1V
Gate to Source Voltage (Vgs)：6V
Drain Current-Max (Abs) (ID)：0.46A
Drain to Source Breakdown Voltage：-20V
Max Junction Temperature (Tj)：150°C
Height：900μm
Length：1.7mm
Width：850μm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

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