FDV303N

Name: ON Semiconductor FDV303N
Brand: ON Semiconductor
Rating: 5 (17 reviews)

ON Semiconductor
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-236-3, SC-59, SOT-23-3
MOSFET N-CH 25V 680MA SOT-23
Date Sheet

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Lifecycle Status：ACTIVE (Last Updated: 16 hours ago)
Factory Lead Time：10 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：680mA Ta
Drive Voltage (Max Rds On, Min Rds On)：2.7V 4.5V
Number of Elements：1
Power Dissipation (Max)：350mW Ta
Turn Off Delay Time：17 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：1997
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：450mOhm
Terminal Finish：TIN
Voltage - Rated DC：25V
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：680mA
Time@Peak Reflow Temperature-Max (s)：30
Number of Channels：1
Voltage：20V
Element Configuration：Single
Current：12A
Operating Mode：ENHANCEMENT MODE
Power Dissipation：350mW
Turn On Delay Time：3 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：450m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：2.3nC @ 4.5V
Rise Time：8.5ns
Vgs (Max)：±8V
Fall Time (Typ)：8.5 ns
Continuous Drain Current (ID)：680mA
Threshold Voltage：800mV
Gate to Source Voltage (Vgs)：8V
Drain to Source Breakdown Voltage：25V
Dual Supply Voltage：25V
Max Junction Temperature (Tj)：150°C
Nominal Vgs：800 mV
Height：1.11mm
Length：2.92mm
Width：3.05mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

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