Главное Дискретные полупроводниковые Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные BSS84PH6327XTSA2
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BSS84PH6327XTSA2
- Infineon Technologies
- Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
- TO-236-3, SC-59, SOT-23-3
- Trans MOSFET P-CH 60V 0.17A Automotive 3-Pin SOT-23 T/R
- Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time:10 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Number of Pins:3
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:170mA Ta
- Drive Voltage (Max Rds On, Min Rds On):4.5V 10V
- Number of Elements:1
- Power Dissipation (Max):360mW Ta
- Turn Off Delay Time:8.6 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:SIPMOS®
- Published:2002
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Resistance:12Ohm
- Additional Feature:LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Number of Channels:1
- Voltage:60V
- Element Configuration:Single
- Current:17A
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:360mW
- Turn On Delay Time:6.7 ns
- FET Type:P-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:8 Ω @ 170mA, 10V
- Vgs(th) (Max) @ Id:2V @ 20μA
- Halogen Free:Halogen Free
- Input Capacitance (Ciss) (Max) @ Vds:19pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:1.5nC @ 10V
- Rise Time:16.2ns
- Vgs (Max):±20V
- Continuous Drain Current (ID):170mA
- Threshold Voltage:-1.5V
- Gate to Source Voltage (Vgs):20V
- Max Dual Supply Voltage:-60V
- Nominal Vgs:-1.5 V
- Height:900μm
- Length:2.9mm
- Width:1.3mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 0
Итого $0.00000