BSM200GA120DLC

Name: Infineon BSM200GA120DLC
Brand: Infineon
Rating: 4.8 (14 reviews)

Infineon
Дискретные полупроводниковые
62 mm
Insulated Gate Bipolar Transistor, 370A I(C), 1200V V(BR)CES, MODULE-5
Date Sheet

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Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Package / Case：62 mm
Surface Mount：NO
Number of Terminals：4
Transistor Element Material：SILICON
Collector- Emitter Voltage VCEO Max：1200 V
RoHS：N
Brand：Infineon Technologies
Part # Aliases：SP000092013 BSM200GA120DLCHOSA1
Mounting Styles：Chassis Mount
Factory Pack QuantityFactory Pack Quantity：10
Minimum Operating Temperature：- 40 C
Maximum Operating Temperature：+ 125 C
Pd - Power Dissipation：1450 W
Maximum Gate Emitter Voltage：20 V
Manufacturer：Infineon
Manufacturer Part Number：BSM200GA120DLC
Package Description：FLANGE MOUNT, R-XUFM-X4
Package Style：FLANGE MOUNT
Package Body Material：UNSPECIFIED
Turn-on Time-Nom (ton)：190 ns
Turn-off Time-Nom (toff)：650 ns
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：175 °C
Rohs Code：Yes
Package Shape：RECTANGULAR
Number of Elements：1
Part Life Cycle Code：Not Recommended
Ihs Manufacturer：INFINEON TECHNOLOGIES AG
Risk Rank：5.15
Part Package Code：MODULE
Packaging：Tray
Pbfree Code：Yes
ECCN Code：EAR99
Type：Single
Additional Feature：UL RECOGNIZED
Subcategory：IGBTs
Technology：Si
Terminal Position：UPPER
Terminal Form：UNSPECIFIED
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：compliant
Pin Count：5
JESD-30 Code：R-XUFM-X4
Qualification Status：Not Qualified
Configuration：Single Dual Emitter
Case Connection：ISOLATED
Transistor Application：POWER CONTROL
Circuit Type：Single IGBT
Polarity/Channel Type：N-CHANNEL
Product Type：IGBT Modules
Power Dissipation-Max (Abs)：1470 W
Collector Current-Max (IC)：370 A
Collector-Emitter Voltage-Max：1200 V
Gate-Emitter Voltage-Max：20 V
VCEsat-Max：2.6 V
Product：IGBT Silicon Modules
Product Category：IGBT Modules
Length：106.4 mm
Height：36.5 mm
Width：61.4 mm
Height (mm)：36.5 mm

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