BSZ018NE2LSIXT

Name: Infineon Technologies BSZ018NE2LSIXT
Brand: Infineon Technologies
Rating: 4.9 (8 reviews)

Infineon Technologies
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TSDSON-8
MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
Date Sheet

Lagernummer 900

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Factory Lead Time：26 Weeks
Package / Case：TSDSON-8
Surface Mount：YES
Number of Terminals：3
Transistor Element Material：SILICON
Continuous Drain Current Id：22
Unit Weight：0.001367 oz
Part # Aliases：SP000906032 BSZ018NE2LSIATMA1
Typical Turn-On Delay Time：5.5 ns
Typical Turn-Off Delay Time：26 ns
Factory Pack QuantityFactory Pack Quantity：5000
Forward Transconductance - Min：70 S
Tradename：OptiMOS
Channel Mode：Enhancement
Pd - Power Dissipation：69 W
Maximum Operating Temperature：+ 150 C
Minimum Operating Temperature：- 55 C
Qg - Gate Charge：39 nC
Vgs th - Gate-Source Threshold Voltage：2 V
Vgs - Gate-Source Voltage：- 20 V, + 20 V
Rds On - Drain-Source Resistance：1.9 mOhms
Id - Continuous Drain Current：153 A
Vds - Drain-Source Breakdown Voltage：25 V
Transistor Polarity：N-Channel
Mounting Styles：SMD/SMT
RoHS：Details
Package Description：SMALL OUTLINE, S-PDSO-N3
Package Style：SMALL OUTLINE
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：NOT SPECIFIED
Rohs Code：Yes
Manufacturer Part Number：BSZ018NE2LSIXT
Package Shape：SQUARE
Number of Elements：1
Part Life Cycle Code：Active
Ihs Manufacturer：INFINEON TECHNOLOGIES AG
Risk Rank：1.73
Drain Current-Max (ID)：22 A
Packaging：MouseReel
Pbfree Code：Yes
ECCN Code：EAR99
Terminal Position：DUAL
Terminal Form：NO LEAD
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：compliant
JESD-30 Code：S-PDSO-N3
Configuration：Single
Number of Channels：1 Channel
Operating Mode：ENHANCEMENT MODE
Case Connection：DRAIN
Transistor Application：SWITCHING
Rise Time：4.4 ns
Polarity/Channel Type：N-CHANNEL
Transistor Type：1 N-Channel
Drain-source On Resistance-Max：0.0025 Ω
Pulsed Drain Current-Max (IDM)：160 A
DS Breakdown Voltage-Min：25 V
Channel Type：N
Avalanche Energy Rating (Eas)：80 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
Width：3.3 mm
Length：3.3 mm
Height：1.1 mm

Со склада 900

Итого $0.00000