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APT25GR120BD15
- Microsemi Corporation
- Транзисторы - IGBT - Одинарные
- TO-247-3
- Trans IGBT Chip N-CH 1.2KV 75A 3-Pin(3+Tab) TO-247
- Date Sheet
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Спецификация Часто задаваемые вопросы
- Lifecycle Status:IN PRODUCTION (Last Updated: 2 days ago)
- Factory Lead Time:29 Weeks
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Weight:38.000013g
- Collector-Emitter Breakdown Voltage:1.2kV
- Test Conditions:600V, 25A, 4.3 Ω, 15V
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tube
- Published:2001
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- ECCN Code:EAR99
- Max Power Dissipation:521W
- Element Configuration:Single
- Input Type:Standard
- Polarity/Channel Type:N-CHANNEL
- Collector Emitter Voltage (VCEO):1.2kV
- Max Collector Current:75A
- Voltage - Collector Emitter Breakdown (Max):1200V
- Vce(on) (Max) @ Vge, Ic:3.2V @ 15V, 25A
- Continuous Collector Current:75A
- IGBT Type:NPT
- Gate Charge:203nC
- Current - Collector Pulsed (Icm):100A
- Td (on/off) @ 25°C:16ns/122ns
- Switching Energy:742μJ (on), 427μJ (off)
- Gate-Emitter Voltage-Max:30V
- Gate-Emitter Thr Voltage-Max:6.5V
- Height:5.31mm
- Length:21.46mm
- Width:16.26mm
- RoHS Status:RoHS Compliant
- Lead Free:Lead Free
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