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2SA1162-Y,LF
- Toshiba Semiconductor and Storage
- Транзисторы - Биполярные (BJT) - Одинарные
- TO-236-3, SC-59, SOT-23-3
- TRANS PNP 50V 0.15A S-MINI
- Date Sheet
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Спецификация Часто задаваемые вопросы
- Factory Lead Time:12 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Weight:7.994566mg
- Collector-Emitter Breakdown Voltage:50V
- hFEMin:70
- Operating Temperature:125°C TJ
- Packaging:Tape & Reel (TR)
- Published:2006
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Max Power Dissipation:150mW
- Element Configuration:Single
- Power - Max:150mW
- Gain Bandwidth Product:80MHz
- Transistor Type:PNP
- Collector Emitter Voltage (VCEO):50V
- Max Collector Current:150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA 6V
- Current - Collector Cutoff (Max):100μA ICBO
- Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
- Max Breakdown Voltage:50V
- Collector Base Voltage (VCBO):50V
- Emitter Base Voltage (VEBO):5V
- RoHS Status:RoHS Compliant
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Итого $0.00000