Главное Дискретные полупроводниковые Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные NTK3139PT1G
Изображение служит лишь для справки
NTK3139PT1G
- ON Semiconductor
- Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
- SOT-723
- MOSFET P-CH 20V 0.66A SOT-723
- Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status:ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time:7 Weeks
- Contact Plating:Tin
- Mounting Type:Surface Mount
- Package / Case:SOT-723
- Surface Mount:YES
- Number of Pins:3
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:660mA Ta
- Drive Voltage (Max Rds On, Min Rds On):1.5V 4.5V
- Number of Elements:1
- Power Dissipation (Max):310mW Ta
- Turn Off Delay Time:32.7 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2006
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- Termination:SMD/SMT
- ECCN Code:EAR99
- Resistance:380mOhm
- Terminal Position:DUAL
- Terminal Form:FLAT
- Peak Reflow Temperature (Cel):260
- Time@Peak Reflow Temperature-Max (s):40
- Pin Count:3
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:310mW
- Turn On Delay Time:9 ns
- FET Type:P-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:480m Ω @ 780mA, 4.5V
- Vgs(th) (Max) @ Id:1.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:170pF @ 16V
- Rise Time:5.8ns
- Drain to Source Voltage (Vdss):20V
- Vgs (Max):±6V
- Fall Time (Typ):5.8 ns
- Continuous Drain Current (ID):780mA
- Threshold Voltage:-1.2V
- Gate to Source Voltage (Vgs):6V
- Drain Current-Max (Abs) (ID):0.78A
- Drain to Source Breakdown Voltage:-20V
- Dual Supply Voltage:-20V
- Height:550μm
- Length:1.25mm
- Width:850μm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 0
Итого $0.00000