STD7NS20T4

Name: STMicroelectronics STD7NS20T4
Brand: STMicroelectronics
Rating: 4.8 (11 reviews)

STMicroelectronics
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 200V 7A DPAK
Date Sheet

Lagernummer 0

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：7A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：45W Tc
Operating Temperature：150°C TJ
Packaging：Tape & Reel (TR)
Series：MESH OVERLAY™
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：400mOhm
Terminal Finish：Matte Tin (Sn) - annealed
Voltage - Rated DC：200V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：7A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD7
Pin Count：3
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：45W
Case Connection：DRAIN
Turn On Delay Time：10 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：400m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：540pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：45nC @ 10V
Rise Time：15ns
Vgs (Max)：±20V
Fall Time (Typ)：12 ns
Continuous Drain Current (ID)：7A
Threshold Voltage：3V
JEDEC-95 Code：TO-252AA
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：7A
Drain to Source Breakdown Voltage：200V
Pulsed Drain Current-Max (IDM)：28A
Avalanche Energy Rating (Eas)：60 mJ
Height：2.4mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

Со склада 0

Итого $0.00000