BSC520N15NS3GATMA1

Name: Infineon Technologies BSC520N15NS3GATMA1
Brand: Infineon Technologies
Rating: 4.8 (6 reviews)

Infineon Technologies
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
8-PowerTDFN
MOSFET N-CH 150V 21A TDSON-8
Date Sheet

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Спецификация Часто задаваемые вопросы

Factory Lead Time：26 Weeks
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Surface Mount：YES
Number of Pins：8
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：21A Tc
Drive Voltage (Max Rds On, Min Rds On)：8V 10V
Number of Elements：1
Power Dissipation (Max)：57W Tc
Turn Off Delay Time：10 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：OptiMOS™
Published：2003
JESD-609 Code：e3
Pbfree Code：no
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Terminal Position：DUAL
Terminal Form：FLAT
Reach Compliance Code：not_compliant
Pin Count：8
JESD-30 Code：R-PDSO-F5
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：57W
Case Connection：DRAIN
Turn On Delay Time：7 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：52m Ω @ 18A, 10V
Vgs(th) (Max) @ Id：4V @ 35μA
Halogen Free：Halogen Free
Input Capacitance (Ciss) (Max) @ Vds：890pF @ 75V
Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
Rise Time：4ns
Vgs (Max)：±20V
Fall Time (Typ)：3 ns
Continuous Drain Current (ID)：21A
Threshold Voltage：3V
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.052Ohm
Drain to Source Breakdown Voltage：150V
Avalanche Energy Rating (Eas)：60 mJ
Nominal Vgs：3 V
Height：1.1mm
Length：5.35mm
Width：6.1mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

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