Главное Дискретные полупроводниковые Транзисторы - Биполярные (BJT) - Массивы, предварительно смещенные MUN5313DW1T1G
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MUN5313DW1T1G
- ON Semiconductor
- Транзисторы - Биполярные (BJT) - Массивы, предварительно смещенные
- 6-TSSOP, SC-88, SOT-363
- TRANS PREBIAS NPN/PNP SOT363
- Date Sheet
Lagernummer 12139
- 1+: $0.07590
- 10+: $0.07160
- 100+: $0.06755
- 500+: $0.06373
- 1000+: $0.06012
Zwischensummenbetrag $0.07590
Спецификация Часто задаваемые вопросы
- Lifecycle Status:ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time:8 Weeks
- Contact Plating:Tin
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Surface Mount:YES
- Number of Pins:6
- Collector-Emitter Breakdown Voltage:50V
- Number of Elements:2
- hFEMin:80
- Packaging:Tape & Reel (TR)
- Published:2004
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:6
- ECCN Code:EAR99
- Max Operating Temperature:150°C
- Min Operating Temperature:-55°C
- Additional Feature:BUILT-IN BIAS RESISTOR RATIO 1
- Voltage - Rated DC:50V
- Max Power Dissipation:250mW
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Current Rating:100mA
- Time@Peak Reflow Temperature-Max (s):40
- Base Part Number:MUN53**DW1
- Pin Count:6
- Polarity:NPN, PNP
- Element Configuration:Dual
- Power Dissipation:256mW
- Transistor Application:SWITCHING
- Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO):50V
- Max Collector Current:100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA 10V
- Current - Collector Cutoff (Max):500nA
- Vce Saturation (Max) @ Ib, Ic:250mV @ 300μA, 10mA
- Max Breakdown Voltage:50V
- Resistor - Base (R1):47k Ω
- Continuous Collector Current:100mA
- Resistor - Emitter Base (R2):47k Ω
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 12139
- 1+: $0.07590
- 10+: $0.07160
- 100+: $0.06755
- 500+: $0.06373
- 1000+: $0.06012
Итого $0.07590