NSBC114EDXV6T1G

Name: ON Semiconductor NSBC114EDXV6T1G
Brand: ON Semiconductor
Price: 0.2925774 USD
Availability: InStock
Rating: 4.9 (12 reviews)

ON Semiconductor
Транзисторы - Биполярные (BJT) - Массивы, предварительно смещенные
SOT-563, SOT-666
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-563 T/R
Date Sheet

Lagernummer 23379

1+： $0.29258
10+： $0.27602
100+： $0.26039
500+： $0.24565
1000+： $0.23175

Zwischensummenbetrag $0.29258

Спецификация Часто задаваемые вопросы

Lifecycle Status：ACTIVE (Last Updated: 15 hours ago)
Factory Lead Time：17 Weeks
Contact Plating：Tin
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Surface Mount：YES
Number of Pins：6
Collector-Emitter Breakdown Voltage：50V
Number of Elements：2
hFEMin：35
Packaging：Tape & Reel (TR)
Published：2006
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：6
ECCN Code：EAR99
Max Operating Temperature：150°C
Min Operating Temperature：-55°C
Additional Feature：BUILT IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC：50V
Max Power Dissipation：500mW
Terminal Form：FLAT
Peak Reflow Temperature (Cel)：260
Current Rating：100mA
Time@Peak Reflow Temperature-Max (s)：40
Base Part Number：NSBC1*
Pin Count：6
Polarity：NPN
Element Configuration：Dual
Power Dissipation：357mW
Transistor Application：SWITCHING
Transistor Type：2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)：50V
Max Collector Current：100mA
DC Current Gain (hFE) (Min) @ Ic, Vce：35 @ 5mA 10V
Current - Collector Cutoff (Max)：500nA
Vce Saturation (Max) @ Ib, Ic：250mV @ 300μA, 10mA
Max Breakdown Voltage：50V
Resistor - Base (R1)：10k Ω
Continuous Collector Current：100mA
Resistor - Emitter Base (R2)：10k Ω
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

Со склада 23379

1+： $0.29258
10+： $0.27602
100+： $0.26039
500+： $0.24565
1000+： $0.23175

Итого $0.29258