Главное Дискретные полупроводниковые Транзисторы - Биполярные (BJT) - Массивы, предварительно смещенные EMC5DXV5T1G
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EMC5DXV5T1G
- ON Semiconductor
- Транзисторы - Биполярные (BJT) - Массивы, предварительно смещенные
- SOT-553
- TRANS PREBIAS NPN/PNP SOT553
- Date Sheet
Lagernummer 3959
- 1+: $0.17366
- 10+: $0.16383
- 100+: $0.15456
- 500+: $0.14581
- 1000+: $0.13755
Zwischensummenbetrag $0.17366
Спецификация Часто задаваемые вопросы
- Lifecycle Status:ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time:2 Weeks
- Mounting Type:Surface Mount
- Package / Case:SOT-553
- Surface Mount:YES
- Number of Pins:5
- Collector-Emitter Breakdown Voltage:50V
- Number of Elements:2
- Packaging:Cut Tape (CT)
- Published:2010
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:5
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Max Operating Temperature:150°C
- Min Operating Temperature:-55°C
- Additional Feature:BUILT-IN BIAS RESISTOR RATIO IS 1
- Voltage - Rated DC:50V
- Max Power Dissipation:500mW
- Terminal Form:FLAT
- Peak Reflow Temperature (Cel):260
- Current Rating:100mA
- Time@Peak Reflow Temperature-Max (s):40
- Pin Count:5
- Polarity:NPN, PNP
- Configuration:COMPLEX
- Power Dissipation:500mW
- Transistor Application:SWITCHING
- Halogen Free:Halogen Free
- Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO):50V
- Max Collector Current:100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA 10V / 20 @ 5mA 10V
- Current - Collector Cutoff (Max):500nA
- Vce Saturation (Max) @ Ib, Ic:250mV @ 300μA, 10mA
- Max Breakdown Voltage:50V
- Emitter Base Voltage (VEBO):6V
- Resistor - Base (R1):47k Ω, 4.7k Ω
- Continuous Collector Current:100mA
- Resistor - Emitter Base (R2):47k Ω, 10k Ω
- Height:600μm
- Length:1.7mm
- Width:1.3mm
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 3959
- 1+: $0.17366
- 10+: $0.16383
- 100+: $0.15456
- 500+: $0.14581
- 1000+: $0.13755
Итого $0.17366