Главное Дискретные полупроводниковые Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные PDTC114ET,215
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PDTC114ET,215
- Nexperia USA Inc.
- Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные
- TO-236-3, SC-59, SOT-23-3
- TRANS PREBIAS NPN 250MW TO236AB
- Date Sheet
Lagernummer 62222
- 1+: $0.08940
- 10+: $0.08434
- 100+: $0.07956
- 500+: $0.07506
- 1000+: $0.07081
Zwischensummenbetrag $0.08940
Спецификация Часто задаваемые вопросы
- Factory Lead Time:4 Weeks
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Surface Mount:YES
- Number of Pins:3
- Transistor Element Material:SILICON
- Number of Elements:1
- hFEMin:30
- Packaging:Tape & Reel (TR)
- Published:2002
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Time@Peak Reflow Temperature-Max (s):40
- Base Part Number:PDTC114
- Pin Count:3
- Qualification Status:Not Qualified
- Polarity:NPN
- Configuration:SINGLE WITH BUILT-IN RESISTOR
- Power Dissipation:250mW
- Transistor Application:SWITCHING
- Transistor Type:NPN - Pre-Biased
- Collector Emitter Voltage (VCEO):50V
- Max Collector Current:100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA 5V
- Current - Collector Cutoff (Max):1μA
- Vce Saturation (Max) @ Ib, Ic:150mV @ 500μA, 10mA
- Transition Frequency:230MHz
- Frequency - Transition:230MHz
- Collector Base Voltage (VCBO):50V
- Emitter Base Voltage (VEBO):10V
- Max Junction Temperature (Tj):150°C
- Resistor - Base (R1):10 k Ω
- Resistor - Emitter Base (R2):10 k Ω
- Ambient Temperature Range High:150°C
- Height:1.1mm
- RoHS Status:ROHS3 Compliant
Со склада 62222
- 1+: $0.08940
- 10+: $0.08434
- 100+: $0.07956
- 500+: $0.07506
- 1000+: $0.07081
Итого $0.08940