DTC123JET1G

Name: ON Semiconductor DTC123JET1G
Brand: ON Semiconductor
Rating: 4.7 (17 reviews)

ON Semiconductor
Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные
SC-75, SOT-416
ON SEMICONDUCTOR - DTC123JET1G - BRT TRANSISTOR, 50V, 47K/2.2KOHM, SC75, FULL REEL
Date Sheet

Lagernummer 58714

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Lifecycle Status：ACTIVE (Last Updated: 6 days ago)
Factory Lead Time：8 Weeks
Contact Plating：Tin
Mounting Type：Surface Mount
Package / Case：SC-75, SOT-416
Surface Mount：YES
Number of Pins：3
Collector-Emitter Breakdown Voltage：50V
Number of Elements：1
hFEMin：80
Packaging：Tape & Reel (TR)
Published：2006
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Max Operating Temperature：150°C
Min Operating Temperature：-55°C
Additional Feature：BUILT-IN BIAS RESISTOR RATIO IS 0.047
Voltage - Rated DC：50V
Max Power Dissipation：200mW
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：100mA
Time@Peak Reflow Temperature-Max (s)：40
Base Part Number：DTC123
Pin Count：3
Qualification Status：Not Qualified
Max Output Current：100mA
Operating Supply Voltage：50V
Polarity：NPN
Element Configuration：Single
Power Dissipation：200mW
Transistor Application：SWITCHING
Halogen Free：Halogen Free
Transistor Type：NPN - Pre-Biased
Collector Emitter Voltage (VCEO)：50V
Max Collector Current：100mA
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA 10V
Current - Collector Cutoff (Max)：500nA
Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
Max Breakdown Voltage：50V
Emitter Base Voltage (VEBO)：6V
Resistor - Base (R1)：2.2 k Ω
Continuous Collector Current：100mA
Resistor - Emitter Base (R2)：47 k Ω
Height：800μm
Length：1.65mm
Width：900μm
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

Со склада 58714

Итого $0.00000