Главное Дискретные полупроводниковые Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные PDTC143XT,215
Изображение служит лишь для справки
PDTC143XT,215
- Nexperia USA Inc.
- Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные
- TO-236-3, SC-59, SOT-23-3
- NEXPERIA - PDTC143XT,215 - BRT TRANSISTOR, 50V, 4.7/10KOHM, SOT-23
- Date Sheet
Lagernummer 11988
- 1+: $0.07236
- 10+: $0.06826
- 100+: $0.06440
- 500+: $0.06075
- 1000+: $0.05731
Zwischensummenbetrag $0.07236
Спецификация Часто задаваемые вопросы
- Factory Lead Time:4 Weeks
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Surface Mount:YES
- Number of Pins:3
- Transistor Element Material:SILICON
- Current-Collector (Ic) (Max):100mA
- Number of Elements:1
- Packaging:Tape & Reel (TR)
- Published:2011
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Additional Feature:BUILT-IN BIAS RESISTOR RATIO IS 2.1
- HTS Code:8541.21.00.95
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Time@Peak Reflow Temperature-Max (s):30
- Base Part Number:DTC143
- Pin Count:3
- Polarity:NPN
- Configuration:SINGLE WITH BUILT-IN RESISTOR
- Power Dissipation:250mW
- Transistor Application:SWITCHING
- Transistor Type:NPN - Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA 5V
- Current - Collector Cutoff (Max):1μA
- Vce Saturation (Max) @ Ib, Ic:100mV @ 500μA, 10mA
- Voltage - Collector Emitter Breakdown (Max):50V
- Resistor - Base (R1):4.7 k Ω
- Resistor - Emitter Base (R2):10 k Ω
- RoHS Status:ROHS3 Compliant
Со склада 11988
- 1+: $0.07236
- 10+: $0.06826
- 100+: $0.06440
- 500+: $0.06075
- 1000+: $0.05731
Итого $0.07236