Главное Дискретные полупроводниковые Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные PDTC123JT,215
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PDTC123JT,215
- Nexperia USA Inc.
- Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные
- TO-236-3, SC-59, SOT-23-3
- TRANS PREBIAS NPN 250MW TO236AB
- Date Sheet
Lagernummer 89437
- 1+: $0.12191
- 10+: $0.11501
- 100+: $0.10850
- 500+: $0.10236
- 1000+: $0.09656
Zwischensummenbetrag $0.12191
Спецификация Часто задаваемые вопросы
- Factory Lead Time:4 Weeks
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Surface Mount:YES
- Number of Pins:3
- Transistor Element Material:SILICON
- Current-Collector (Ic) (Max):100mA
- Number of Elements:1
- Operating Temperature (Max.):150°C
- Packaging:Tape & Reel (TR)
- Published:2003
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- HTS Code:8541.21.00.95
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Time@Peak Reflow Temperature-Max (s):40
- Base Part Number:PDTC123
- Pin Count:3
- Qualification Status:Not Qualified
- Polarity:NPN
- Configuration:SINGLE WITH BUILT-IN RESISTOR
- Power - Max:250mW
- Transistor Application:SWITCHING
- Transistor Type:NPN - Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA 5V
- Current - Collector Cutoff (Max):1μA
- Vce Saturation (Max) @ Ib, Ic:100mV @ 250μA, 5mA
- Voltage - Collector Emitter Breakdown (Max):50V
- Resistor - Base (R1):2.2 k Ω
- Resistor - Emitter Base (R2):47 k Ω
- Power Dissipation Ambient-Max:0.25W
- RoHS Status:ROHS3 Compliant
Со склада 89437
- 1+: $0.12191
- 10+: $0.11501
- 100+: $0.10850
- 500+: $0.10236
- 1000+: $0.09656
Итого $0.12191