Главное Дискретные полупроводниковые Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные DTD114GCT116
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DTD114GCT116
- ROHM Semiconductor
- Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные
- TO-236-3, SC-59, SOT-23-3
- NPN 500MA/50V DIGITAL TRANSISTOR
- Date Sheet
Lagernummer 2404
- 1+: $0.00798
- 10+: $0.00753
- 100+: $0.00711
- 500+: $0.00670
- 1000+: $0.00632
Zwischensummenbetrag $0.00798
Спецификация Часто задаваемые вопросы
- Factory Lead Time:13 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:50V
- Number of Elements:1
- Packaging:Tape & Reel (TR)
- Published:2016
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Additional Feature:DIGITAL, BUILT-IN BIAS RESISTOR
- Max Power Dissipation:200mW
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:not_compliant
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Pin Count:3
- JESD-30 Code:R-PDSO-G3
- Qualification Status:Not Qualified
- Configuration:SINGLE WITH BUILT-IN RESISTOR
- Power - Max:200mW
- Transistor Application:SWITCHING
- Polarity/Channel Type:NPN
- Transistor Type:NPN - Pre-Biased
- Collector Emitter Voltage (VCEO):300mV
- Max Collector Current:500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:56 @ 50mA 5V
- Current - Collector Cutoff (Max):500nA ICBO
- Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
- Max Breakdown Voltage:50V
- Frequency - Transition:200MHz
- Resistor - Emitter Base (R2):10 k Ω
- RoHS Status:ROHS3 Compliant
Со склада 2404
- 1+: $0.00798
- 10+: $0.00753
- 100+: $0.00711
- 500+: $0.00670
- 1000+: $0.00632
Итого $0.00798