SUD25N15-52-BE3

Name: Vishay Siliconix SUD25N15-52-BE3
Brand: Vishay Siliconix
Rating: 4.7 (11 reviews)

Vishay Siliconix
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 150V 25A DPAK
Date Sheet

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Спецификация Часто задаваемые вопросы

Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package：TO-252AA
Mfr：Vishay Siliconix
Product Status：Active
Current - Continuous Drain (Id) @ 25℃：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Power Dissipation (Max)：3W (Ta), 136W (Tc)
Base Product Number：SUD25
Vds - Drain-Source Breakdown Voltage：150 V
Typical Turn-On Delay Time：15 ns
Vgs th - Gate-Source Threshold Voltage：4 V
Pd - Power Dissipation：136 W
Transistor Polarity：N-Channel
Maximum Operating Temperature：+ 175 C
Vgs - Gate-Source Voltage：- 20 V, + 20 V
Unit Weight：0.011640 oz
Minimum Operating Temperature：- 55 C
Factory Pack QuantityFactory Pack Quantity：2000
Mounting Styles：SMD/SMT
Forward Transconductance - Min：40 S
Channel Mode：Enhancement
Part # Aliases：SUD25N15-52-E3
Manufacturer：Vishay
Brand：Vishay / Siliconix
Qg - Gate Charge：40 nC
Rds On - Drain-Source Resistance：52 mOhms
RoHS：Details
Typical Turn-Off Delay Time：25 ns
Id - Continuous Drain Current：25 A
Operating Temperature：-55°C ~ 175°C (TJ)
Packaging：MouseReel
Subcategory：MOSFETs
Configuration：Single
Number of Channels：1 Channel
FET Type：N-Channel
Rds On (Max) @ Id, Vgs：52mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
Rise Time：70 ns
Drain to Source Voltage (Vdss)：150 V
Vgs (Max)：±20V
Product Type：MOSFET
Transistor Type：1 N-Channel
FET Feature：-
Product Category：MOSFET

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