SI4100DY-T1-E3

Name: Vishay Siliconix SI4100DY-T1-E3
Brand: Vishay Siliconix
Rating: 4.5 (11 reviews)

Vishay Siliconix
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
8-SOIC (0.154, 3.90mm Width)
Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R
Date Sheet

Lagernummer 31681

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Factory Lead Time：14 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：186.993455mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：6.8A Tc
Drive Voltage (Max Rds On, Min Rds On)：6V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 6W Tc
Turn Off Delay Time：15 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：TrenchFET®
Published：2009
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：40
Pin Count：8
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：10 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：63m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：600pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Rise Time：12ns
Drain to Source Voltage (Vdss)：100V
Vgs (Max)：±20V
Fall Time (Typ)：10 ns
Continuous Drain Current (ID)：4.4A
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.063Ohm
Pulsed Drain Current-Max (IDM)：20A
Height：1.55mm
Length：5mm
Width：4mm
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

Со склада 31681

Итого $0.00000