CSD19537Q3

Name: Texas Instruments CSD19537Q3
Brand: Texas Instruments
Rating: 4.9 (7 reviews)

Texas Instruments
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
8-PowerVDFN
MOSFET N-CH 100V 50A 8VSON
Date Sheet

Lagernummer 0

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Lifecycle Status：ACTIVE (Last Updated: 5 days ago)
Factory Lead Time：6 Weeks
Contact Plating：Copper, Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Number of Pins：8
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：50A Ta
Drive Voltage (Max Rds On, Min Rds On)：6V 10V
Number of Elements：1
Power Dissipation (Max)：2.8W Ta 83W Tc
Turn Off Delay Time：10 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：NexFET™
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn)
Additional Feature：AVALANCHE RATED
Terminal Position：DUAL
Terminal Form：NO LEAD
Reach Compliance Code：not_compliant
Base Part Number：CSD19537
Configuration：SINGLE WITH BUILT-IN DIODE
Number of Channels：1
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.8W
Case Connection：DRAIN
Turn On Delay Time：5 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：14.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id：3.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1680pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：21nC @ 10V
Rise Time：3ns
Vgs (Max)：±20V
Fall Time (Typ)：3 ns
Continuous Drain Current (ID)：9.7A
Threshold Voltage：3V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：100V
Avalanche Energy Rating (Eas)：55 mJ
Max Junction Temperature (Tj)：150°C
Height：1.1mm
Length：3.3mm
Width：3.3mm
Thickness：1mm
RoHS Status：ROHS3 Compliant
Lead Free：Contains Lead

Со склада 0

Итого $0.00000