BSC022N04LSATMA1

Name: Infineon Technologies BSC022N04LSATMA1
Brand: Infineon Technologies
Rating: 5 (9 reviews)

Infineon Technologies
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
8-PowerTDFN
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
Date Sheet

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Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Factory Lead Time：26 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Number of Pins：8
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：100A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 69W Tc
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：OptiMOS™
Published：2012
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Terminal Position：DUAL
Terminal Form：FLAT
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：not_compliant
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Base Part Number：BSC022N04
JESD-30 Code：R-PDSO-F5
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：2.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id：2V @ 250μA
Halogen Free：Halogen Free
Input Capacitance (Ciss) (Max) @ Vds：2600pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：37nC @ 10V
Rise Time：6.8ns
Vgs (Max)：±20V
Continuous Drain Current (ID)：100A
Gate to Source Voltage (Vgs)：20V
Max Dual Supply Voltage：40V
Drain Current-Max (Abs) (ID)：25A
Drain-source On Resistance-Max：0.0032Ohm
Drain to Source Breakdown Voltage：40V
Pulsed Drain Current-Max (IDM)：400A
Avalanche Energy Rating (Eas)：70 mJ
RoHS Status：ROHS3 Compliant
Lead Free：Contains Lead

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