Главное Дискретные полупроводниковые Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные 2N7002W-7-F
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2N7002W-7-F
- Diodes Incorporated
- Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
- SC-70, SOT-323
- MOSFET N-CH 60V 115MA SOT323
- Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time:20 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:SC-70, SOT-323
- Number of Pins:3
- Weight:6.010099mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:115mA Ta
- Drive Voltage (Max Rds On, Min Rds On):5V 10V
- Number of Elements:1
- Power Dissipation (Max):200mW Ta
- Turn Off Delay Time:11 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2008
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- Termination:SMD/SMT
- ECCN Code:EAR99
- Resistance:7.5Ohm
- Voltage - Rated DC:60V
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Current Rating:115mA
- Time@Peak Reflow Temperature-Max (s):40
- Pin Count:3
- Number of Channels:1
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:200mW
- Turn On Delay Time:7 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:7.5 Ω @ 50mA, 5V
- Vgs(th) (Max) @ Id:2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
- Vgs (Max):±20V
- Continuous Drain Current (ID):115mA
- Threshold Voltage:2V
- Gate to Source Voltage (Vgs):20V
- Drain to Source Breakdown Voltage:70V
- Dual Supply Voltage:60V
- Nominal Vgs:2 V
- Feedback Cap-Max (Crss):5 pF
- Height:1mm
- Length:2.2mm
- Width:1.35mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 0
Итого $0.00000