Главное Дискретные полупроводниковые Транзисторы - Биполярные (BJT) - Массивы, предварительно смещенные RN1903,LF(CT
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RN1903,LF(CT
- Toshiba Semiconductor and Storage
- Транзисторы - Биполярные (BJT) - Массивы, предварительно смещенные
- 6-TSSOP, SC-88, SOT-363
- TRANS 2NPN PREBIAS 0.2W US6
- Date Sheet
Lagernummer 48
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time:12 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:50V
- Number of Elements:2
- Operating Temperature (Max.):150°C
- Packaging:Cut Tape (CT)
- Published:2014
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:6
- Additional Feature:BUILT IN BIAS RESISTANCE RATIO IS 1
- Max Power Dissipation:200mW
- Terminal Form:GULL WING
- Reach Compliance Code:unknown
- JESD-30 Code:R-PDSO-G6
- Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Power - Max:200mW
- Transistor Application:SWITCHING
- Polarity/Channel Type:NPN
- Transistor Type:2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO):300mV
- Max Collector Current:100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA 5V
- Current - Collector Cutoff (Max):100nA ICBO
- Vce Saturation (Max) @ Ib, Ic:300mV @ 250μA, 5mA
- Transition Frequency:250MHz
- Max Breakdown Voltage:50V
- Frequency - Transition:250MHz
- Resistor - Base (R1):22k Ω
- Resistor - Emitter Base (R2):22k Ω
- RoHS Status:RoHS Compliant
Со склада 48
Итого $0.00000