RN1412TE85LF

Name: Toshiba Semiconductor and Storage RN1412TE85LF
Brand: Toshiba Semiconductor and Storage
Price: 0.1803177 USD
Availability: InStock
Rating: 4.7 (12 reviews)

Toshiba Semiconductor and Storage
Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные
TO-236-3, SC-59, SOT-23-3
Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
Date Sheet

Lagernummer 1490

1+： $0.18032
10+： $0.17011
100+： $0.16048
500+： $0.15140
1000+： $0.14283

Zwischensummenbetrag $0.18032

Спецификация Часто задаваемые вопросы

Factory Lead Time：11 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Collector-Emitter Breakdown Voltage：50V
hFEMin：120
Packaging：Cut Tape (CT)
Published：2014
Part Status：Discontinued
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Max Power Dissipation：200mW
Reach Compliance Code：unknown
Polarity：NPN
Element Configuration：Single
Transistor Type：NPN - Pre-Biased
Collector Emitter Voltage (VCEO)：300mV
Max Collector Current：100mA
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA 5V
Current - Collector Cutoff (Max)：100nA ICBO
Vce Saturation (Max) @ Ib, Ic：300mV @ 250μA, 5mA
Max Breakdown Voltage：50V
Frequency - Transition：250MHz
Emitter Base Voltage (VEBO)：5V
Resistor - Base (R1)：22 k Ω
Continuous Collector Current：100mA
RoHS Status：RoHS Compliant

Со склада 1490

1+： $0.18032
10+： $0.17011
100+： $0.16048
500+： $0.15140
1000+： $0.14283

Итого $0.18032