BSC067N06LS3GATMA1

Name: Infineon Technologies BSC067N06LS3GATMA1
Brand: Infineon Technologies
Rating: 4.6 (13 reviews)

Infineon Technologies
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
8-PowerTDFN
Trans MOSFET N-CH 60V 15A 8-Pin TDSON EP T/R
Date Sheet

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Спецификация Часто задаваемые вопросы

Factory Lead Time：26 Weeks
Package / Case：8-PowerTDFN
Mounting Type：Surface Mount
Mount：Surface Mount
Number of Pins：8
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：15A Ta 50A Tc
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 69W Tc
Turn Off Delay Time：37 ns
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：OptiMOS™
Published：2011
JESD-609 Code：e3
Pbfree Code：no
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Terminal Position：DUAL
Terminal Form：FLAT
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：not_compliant
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Pin Count：8
JESD-30 Code：R-PDSO-F5
Qualification Status：Not Qualified
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：15 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：6.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id：2.2V @ 35μA
Halogen Free：Halogen Free
Input Capacitance (Ciss) (Max) @ Vds：5100pF @ 30V
Gate Charge (Qg) (Max) @ Vgs：67nC @ 10V
Rise Time：26ns
Vgs (Max)：±20V
Fall Time (Typ)：7 ns
Continuous Drain Current (ID)：15A
Gate to Source Voltage (Vgs)：20V
Max Dual Supply Voltage：60V
Drain-source On Resistance-Max：0.0067Ohm
Pulsed Drain Current-Max (IDM)：200A
Avalanche Energy Rating (Eas)：47 mJ
RoHS Status：ROHS3 Compliant
Lead Free：Contains Lead

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