RN2906FE(TE85L,F)

Name: Toshiba Semiconductor and Storage RN2906FE(TE85L,F)
Brand: Toshiba Semiconductor and Storage
Price: 0.2308068 USD
Availability: InStock
Rating: 4.9 (17 reviews)

Toshiba Semiconductor and Storage
Транзисторы - Биполярные (BJT) - Массивы, предварительно смещенные
SOT-563, SOT-666
TRANS 2PNP PREBIAS 0.1W ES6
Date Sheet

Lagernummer 3210

1+： $0.23081
10+： $0.21774
100+： $0.20542
500+： $0.19379
1000+： $0.18282

Zwischensummenbetrag $0.23081

Спецификация Часто задаваемые вопросы

Factory Lead Time：12 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：50V
Number of Elements：2
Packaging：Tape & Reel (TR)
Published：2014
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Max Power Dissipation：100mW
Reach Compliance Code：unknown
Power - Max：100mW
Polarity/Channel Type：PNP
Transistor Type：2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)：300mV
Max Collector Current：100mA
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA 5V
Current - Collector Cutoff (Max)：100nA ICBO
Vce Saturation (Max) @ Ib, Ic：300mV @ 250μA, 5mA
Max Breakdown Voltage：50V
Frequency - Transition：200MHz
Resistor - Base (R1)：4.7k Ω
Resistor - Emitter Base (R2)：47k Ω
RoHS Status：RoHS Compliant

Со склада 3210

1+： $0.23081
10+： $0.21774
100+： $0.20542
500+： $0.19379
1000+： $0.18282

Итого $0.23081